jan. 2000 mitsubishi semiconductor M63802P/fp/gp/kp 7-unit 300ma transistor array unit: w the seven circuits share the gnd. the diode, indicated with the dotted line, is parasitic, and cannot be used. input output gnd 10.5k 10k vz=7v 16p4(p) 16p2n-a(fp) 16p2s-a(gp) 16p2z-a(kp) in7 ? 7 10 in5 ? 5 12 input output in4 ? 4 13 in3 ? 3 in2 ? 2 15 1 in1 ? 16 gnd nc 9 8 in6 ? 611 nc : no connection ? o1 ? o2 ? o3 ? o4 ? o5 ? o6 ? o7 14 package type collector-emitter voltage collector current input voltage power dissipation operating temperature storage temperature pin configuration description M63802P, m63802fp, m63802gp and m63802kp are seven-circuit singe transistor arrays. the circuits are made of npn transistors. both the semiconductor integrated cir- cuits perform high-current driving with extremely low input- current supply. features l four package configurations (p, fp, gp and kp) l medium breakdown voltage (bv ceo 3 35v) l synchronizing current (i c(max) = 300ma) l with zener diodes l low output saturation voltage l wide operating temperature range (ta=C40 to +85 c) application driving of digit drives of indication elements (leds and lamps) with small signals function the M63802P, m63802fp, m63802gp and m63802kp each have seven circuits consisting of npn transistor. the transis- tor emitters are all connected to the gnd pin (pin 8). the transistors allow synchronous flow of 300ma collector current. a maximum of 35v voltage can be applied between the collector and emitter. circuit diagram v ma v w c c C0.5 ~ +35 300 C0.5 ~ +35 1.47 1.00 0.80 0.78 C40 ~ +85 C55 ~ +125 ratings symbol parameter conditions unit absolute maximum ratings (unless otherwise noted, ta = C40 ~ +85 c) output, h current per circuit output, l v ceo i c v i p d t opr t stg ta = 25 c, when mounted on board M63802P m63802fp m63802gp m63802kp
jan. 2000 mitsubishi semiconductor M63802P/fp/gp/kp 7-unit 300ma transistor array ton toff 50% 50% 50% 50% output input (1)pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, zo = 50 w , v ih = 18v (2)input-output conditions : r l = 220 w , vo = 35v (3)electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes pg 50 w r l output input vo c l measured device duty cycle no more than 45% duty cycle no more than 100% duty cycle no more than 30% duty cycle no more than 100% duty cycle no more than 24% duty cycle no more than 100% duty cycle no more than 24% duty cycle no more than 100% recommended operating conditions (unless otherwise noted, ta = C40 ~ +85 c) v (br) ceo v in(on) h fe v v 35 13 50 19 0.2 0.8 23 symbol unit parameter test conditions limits min typ max v timing diagram note 1 test circuit collector-emitter breakdown voltage on input voltage dc amplification factor i ceo = 10 m a i in = 1ma, i c = 10ma i in = 2ma, i c = 150ma i in = 1ma, i c = 10ma v ce = 10v, i c = 10ma v ce(sat) collector-emitter saturation voltage electrical characteristics (unless otherwise noted, ta = 25 c) v o v 0 0 0 0 0 0 0 0 0 0 35 250 160 250 130 250 120 250 120 30 symbol unit parameter test conditions limits min typ max output voltage ma v i c v in input voltage collector current (current per 1 circuit when 7 circuits are coming on simulta- neously) M63802P m63802fp m63802gp m63802kp ns ns 140 240 symbol unit parameter test conditions limits min typ max turn-on time turn-off time t on t off c l = 15pf (note 1) switching characteristics (unless otherwise noted, ta = 25 c)
jan. 2000 mitsubishi semiconductor M63802P/fp/gp/kp 7-unit 300ma transistor array typical characteristics thermal dirtying factor characteristics ambient temperature ta ( c) power dissipation pd (w) input characteristics input voltage v i (v) input current i i (ma) duty cycle-collector characteristics (M63802P) duty cycle (%) collector current ic (ma) duty cycle-collector characteristics (M63802P) duty cycle (%) collector current ic (ma) duty cycle-collector characteristics (m63802fp) duty cycle (%) collector current ic (ma) duty cycle-collector characteristics (m63802fp) duty cycle (%) collector current ic (ma) 2.0 1.5 1.0 0.5 0 0 25 50 75 100 M63802P m63802fp m63802gp m63802kp 0.744 0.520 0.418 0.406 85 4 3 2 1 0 030 25 20 15 10 5 ta = 25 c ta = ?0 c ta = 85 c 0 100 20 40 60 80 400 300 200 100 0 5 6 7 1 ~ 4 the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 25 c 400 300 200 100 0 0 100 20 40 60 80 1 ~ 2 3 4 5 6 7 the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 85 c 400 300 200 100 0 0 100 20 40 60 80 1 ~ 3 4 5 6 7 the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta=25 c 400 300 200 100 0 0 100 20 40 60 80 1 2 3 4 5 6 7 the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 85 c
jan. 2000 mitsubishi semiconductor M63802P/fp/gp/kp 7-unit 300ma transistor array duty cycle-collector characteristics (m63802gp/kp) duty cycle (%) collector current ic (ma) duty cycle-collector characteristics (m63802gp/kp) duty cycle (%) collector current ic (ma) output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current ic (ma) output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current ic (ma) output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current ic (ma) dc amplification factor collector current characteristics collector current ic (ma) dc amplification factor h fe 400 300 200 100 0 0 100 20 40 60 80 1 ~ 2 4 5 6 7 3 the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 25 c 400 300 200 100 0 0 100 20 40 60 80 1 2 3 4 5 6 7 the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 85 c 250 200 150 100 50 0 0 0.2 0.4 0.6 0.8 ta = 25 c i b = 0.5ma i b = 1ma i b = 1.5ma i b = 3ma i b = 2ma 100 80 60 40 20 0 0 0.05 0.10 0.15 0.20 ta = 25 c v i = 12v v i = 16v v i = 20v v i = 24v v i = 32v v i = 28v 100 80 60 40 20 0 0 0.05 0.10 0.15 0.20 ta = 85 c i i = 2ma ta = 25 c ta = ?0 c 10 0 10 1 10 2 10 1 10 2 10 3 23 57 23 57 2 3 5 7 2 3 5 7 10 3 23 57 v ce = 10v ta = 25 c
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